|本期目录/Table of Contents|

[1]吴键,刘云飞,吕忆农,等.Ca2+含量对(Na0.5Bi0.5)1-xCaxBi4Ti4O15层状压电陶瓷的居里温度和性能的影响[J].南京工业大学学报(自然科学版),2013,35(02):69-73.[doi:10.3969/j.issn.1671-7627.2013.02.014]
 WU Jian,LIU Yunfei,Lü Yinong,et al.Effects of Ca2+ content on Curie temperature and properties of(Na0.5Bi0.5)1-xCaxBi4Ti4O15 layer-structured piezoelectric ceramics[J].Journal of NANJING TECH UNIVERSITY(NATURAL SCIENCE EDITION),2013,35(02):69-73.[doi:10.3969/j.issn.1671-7627.2013.02.014]
点击复制

Ca2+含量对(Na0.5Bi0.5)1-xCaxBi4Ti4O15层状压电陶瓷的居里温度和性能的影响()
分享到:

《南京工业大学学报(自然科学版)》[ISSN:1671-7627/CN:32-1670/N]

卷:
35
期数:
2013年02期
页码:
69-73
栏目:
出版日期:
2013-03-20

文章信息/Info

Title:
Effects of Ca2+ content on Curie temperature and properties of(Na0.5Bi0.5)1-xCaxBi4Ti4O15 layer-structured piezoelectric ceramics
文章编号:
1671-7627(2013)02-0069-05
作者:
吴键刘云飞吕忆农李鸿鹏
南京工业大学 材料科学与工程学院 材料化学工程国家重点实验室,江苏 南京 210009
Author(s):
WU JianLIU YunfeiLü YinongLI Hongpeng
State Key Laboratory of Materials-Oriented Chemical Engineering,College of Materials Science and Engineering,Nanjing University of Technology,Nanjing 210009,China
关键词:
层状压电陶瓷(Na0.5Bi0.5)1-xCaxBi4Ti4O15 居里温度 介电性能 压电性能
Keywords:
layer-structured piezoelectric ceramics(Na0.5Bi0.5)1-xCaxBi4Ti4O15 Curie temperature dielectric property piezoelectric property
分类号:
TQ174
DOI:
10.3969/j.issn.1671-7627.2013.02.014
文献标志码:
A
摘要:
采用传统固相法制备铋层状(Na0.5Bi0.5)1-xCaxBi4Ti4O15(NCBT)压电陶瓷,其中x=0.1、0.2、0.3和0.4。利用X线衍射仪(XRD)、扫描电子显微镜(SEM)、同步热分析仪(STA)、阻抗分析仪等对陶瓷的结构和性能进行表征,分析不同Ca2+含量对NCBT压电陶瓷的居里温度和压电性能的影响。结果表明:在x=0.3条件下制备的NCBT陶瓷性能最佳,压电常数(d33)为17.7 pC/N,介电常数(εr)和介电损耗(tanδ)分别为163.8和0.28%(频率1 kHz),居里温度(Tc)为647.6 ℃。
Abstract:
(Na0.5Bi0.5)1-xCaxBi4Ti4O15(NCBT,x=0.1,0.2,0.3,0.4)piezoelectric ceramics were prepared by conventional solid-state reaction method.X-ray diffractometer(XRD),scanning electron microscope(SEM),simultaneous thermal analyzer(STA),and impedance analyzer were used to investigate the microstructures and properties of the ceramics,and the Curie temperatures and piezoelectric properties of NCBT piezoelectric ceramics with different Ca2+ content(x)were discussed.The results indicated that the excellent properties were shown at x=0.3,and the piezoelectric constant(d33),dielectric constant(εr),dielectric loss(tanδ),and Curie temperature(Tc)were 17.7 pC/N,163.8(1 kHz),0.28%(1 kHz),and 647.6 ℃,respectively.

参考文献/References:

[1] Subbarao E C.A family of ferroelectric bismuth compounds[J].J Phys Chem Solids,1962,23:665-676.
[2] Jaffe B,Cook W R,Jaffe H.Piezoelectric ceramics[M].New York:Academic Press,1971:135-160.
[3] Turner R C,Fuierer P A,Nexnham R E,et al.Materials for high
   temperature acoustic and vibration sensors:a review[J].Appl Acoust,1994,41(4):299-324.
[4] Frit B,Mercurio J P.The crystal chemistry and dielectric properties of the Aurivillius family of complex oxides with perovskite-like layered structures[J].J Alloys Compd,1992,188:27-35.
[5] Gao D J,Kwok K W,Lin D M.Microstructure,piezoelectric and ferroelectric properties of Mn-added Na0.5Bi4.5Ti4O15 ceramics[J].Curr Appl Phys,2011,11(3):124-127.
[6] 李月明,张玉平,程亮,等.掺杂MnO2的(Pb1-xBax)Nb2O6高居里温度压电陶瓷的研究[J].稀有金属材料与工程,2007,36(1):431-434.
[7] Ramana E V,Kiran V V,Sankaram T B.Dielectric and pyroelectric properties of Sr-modified(Na0.5Bi0.5)Bi4Ti4O15 ceramics[J].J Alloys Compd,2008,456(1/2):271-276.
[8] Park B H,Kang B S,Bu S D,et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].Nature,1999,401:682-684.
[9] Jin S,Salvado I M,Costa M E V.Structure,dielectric and ferroelectric anisotropy of Sr2-xCaxBi4Ti5O18 ceramics[J].Mater Res Bull,2011,46:432-437.
[10] 范素华,张丰庆,车全徳,等.烧结温度对Sr2Bi4O18铁电陶瓷性能的影响[J].材料热处理学报,2009,30(6):5-8.
[11] Fan S H,Xu J,Wang P J,et al.The effect of different annealing process on the properties of the CaBi4.3Ti4O15 ferroelectric thin films[J].Trans Mater Heat Treat,2008,29(2):5-8.
[12] Du X F,Chen I W.Ferroelectric thin films of bismuth-containing layered perovskites:Bi4Ti3O12[J].J Am Ceram Soc,1998,81:3253-3259.
[13] Ahrens L H.The use of ionization potentials:ionic radii of the elements[J].Geochim Cosmochim Ac,1952,2(3):155-169.
[14] Kimura T,Fukuchi E,Tani T.Fabrication of texture bismuth sodium titanate using excess bismuth oxide[J].Jpn J Appl Phys,2005,44(11):8055-8061.
[15] Newnham R E,Wolfe R W,Dorrian J F.Structure basis of ferroelectricity in the bismuth titanate family[J].Mat Res Bull,1971,6(10):1029-1040.
[16] 介万奇.晶体生长原理与技术[M].北京:科学出版社,2010.
[17] Bernik S,Daneu N,Recnik A.Inversion boundary induced grain growth in TiO2 or Sb2O3 doped ZnO-based varistor ceramics[J].J Eur Ceram Soc,2004,24(15/16):3703-3708.
[18] Abrahams S C,Kurtz S K,Jamieson P B.Atomic displacement relationship to curie temperature and spontaneous polarization in displacement ferroelectrics[J].Phys Rev,1968,172(2):551-553.

备注/Memo

备注/Memo:
收稿日期:2012-03-06
基金项目:江苏高校优势学科建设工程项目
作者简介:吴键(1984—),男,安徽六安人,硕士,主要研究方向为压电陶瓷材料; 吕忆农(联系人),教授,E-mail:yinonglu@njut.edu.cn..
更新日期/Last Update: 2013-03-31