|本期目录/Table of Contents|

[1]高虹,朱明康,吕忆农,等.Ar/O2对磁控溅射法制备Bi1.5MgNb1.5O7薄膜结构与性能的影响[J].南京工业大学学报(自然科学版),2014,36(03):1-6.[doi:10.3969/j.issn.1671-7627.2014.03.001]
 GAO Hong,ZHU Mingkang,LÜ Yinong,et al.Effects of Ar/O2 on structure and properties of Bi1.5MgNb1.5O7 films prepared by magnetron sputtering[J].Journal of NANJING TECH UNIVERSITY(NATURAL SCIENCE EDITION),2014,36(03):1-6.[doi:10.3969/j.issn.1671-7627.2014.03.001]
点击复制

Ar/O2对磁控溅射法制备Bi1.5MgNb1.5O7薄膜结构与性能的影响()
分享到:

《南京工业大学学报(自然科学版)》[ISSN:1671-7627/CN:32-1670/N]

卷:
36
期数:
2014年03期
页码:
1-6
栏目:
出版日期:
2014-05-20

文章信息/Info

Title:
Effects of Ar/O2 on structure and properties of Bi1.5MgNb1.5O7 films prepared by magnetron sputtering
文章编号:
1671-7627(2014)03-0001-06
作者:
高虹朱明康吕忆农刘云飞
南京工业大学 材料科学与工程学院 材料化学工程国家重点实验室,江苏 南京 210009
Author(s):
GAO HongZHU Mingkang LÜ Yinong LIU Yunfei
State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
关键词:
Bi1.5MgNb1.5O7薄膜 磁控溅射 介电性能 Ar/O2流速比 调谐率
Keywords:
Bi1.5MgNb1.5O7 film magnetron sputtering dielectric properties Ar/O2 flow rate ratio tunability
分类号:
O484
DOI:
10.3969/j.issn.1671-7627.2014.03.001
文献标志码:
A
摘要:
采用射频磁控溅射法在不同Ar/O2流速比下制备铌镁酸铋(Bi1.5MgNb1.5O7,BMN)薄膜。通过X线衍射仪(XRD)、原子力显微镜(AFM)和阻抗分析仪分别对薄膜的相结构、表面形貌和介电性能进行表征。结果表明:经过700 ℃ O2气氛下退火处理,BMN薄膜形成立方焦绿石单相结构。当Ar/O2流速比为2:1时溅射薄膜的表面粗糙度较小,漏电流较低,具有高的介电常数、低的介电损耗(1 MHz的测试频率下介电常数和介电损耗分别为158和0.4%),并且在0.8 MV/cm的外加电场下介电可调率和优质因子分别为16.4%和36。
Abstract:
Bismuth magnesium niobate(Bi1.5MgNb1.5O7, BMN)films were deposited by radio frequency(RF)magnetron sputtering under different Ar/O2 flow rate ratio. The phase structure, the microstructure and the dielectric properties were investigated by X-ray diffraction(XRD), atomic force microscopy(AFM)and precision impedance analysis meter, respectively. Results showed that the films formed single cubic pyrochlore structure after annealed at 700 ℃ in oxygen atmosphere. The BMN film deposited at Ar/O2 flow rate ratio of 2:1 had the lowest surface roughness, and exhibited large dielectric constant and low dielectric loss(158 and 0.4% at 1 MHz). The dielectric tunability and the figure of merit(FOM)value were 16.4% and 36 at a dc bias field of 0.8 MV/cm.

参考文献/References:

[1] Fu W Y,Wang H,Cao L Z,et al.Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced tunable performance[J].Applied Physics Letters,2008,92(18):182910.
[2] Kong L B,Li S,Zhang T S,et al.Electrically tunable dielectric materials and strategies to improve their performances[J].Progress in Materials Science,2010,55(8):840-893.
[3] Su B,Holmes J E,Meggs C,et al.Dielectric and microwave properties of barium strontium titanate(BST)thick films on alumina substrates[J].Journal of the European Ceramic Society,2003,23(14):2699-2703.
[4] Haeni J H,Irvin P,Chang W,et al.Room-temperature ferroelectricity in strained SrTiO3[J].Nature,2004,430(71):758-761.
[5] Cui J D,Dong G X,Wang Y,et al.Microstructure and dielectric properties of BST/MZO ceramic composites for tunable microwave applications[J].Journal of Materials Science:Materials in Electronics,2009,20(5):473-478.
[6] Ma Z J,Zhang T J,He M,et al.Crystallization and electrical properties of Ba0.7Sr0.3TiO3 thin films on SrRuO3/Pt hybrid bottom electrode[J].Journal of Materials Science:Materials in Electronics,2011,22(1):35-39.
[7] Scott J F.Applications of modern ferroelectrics[J].Science,2007,315:954-959.
[8] Liu M,Liu J,Ma C R,et al.Enhanced dielectric properties of(Ba,Sr)TiO3//Ba(Zr,Ti)O3 heterostructures with optimized structure design[J].Crystal Engineering Communication,2013,15:6641-6644.
[9] Zhang X H,Ren W,Shi P,et al.Effect of oxygen pressure on structure and properties of Bi1.5Zn1.0Nb1.5O7 pyrochlore thin films prepared by pulsed laser deposition[J].Applied Surface Science,2010,256(6):1861-1866.
[10] Lu J W,Stemmer S.Low-loss,tunable bismuth zinc niobate films deposited by rf magnetron sputtering[J].Applied Physics Letters,2003,83(12):2411-2413.
[11] Jiang S W,Li Y R,Li R G,et al.Dielectric properties and tunability of cubic pyrochlore Bi1.5MgNb1.5O7 thin films[J].Applied Physics Letters,2009,94(16):162908.
[12] Li L X,Zhang X H,Ji L J,et al.Dielectric properties and electrical behaviors of tunable Bi1.5MgNb1.5O7 thin films[J].Ceramics International,2012,38(5):3541-3545.
[13] Young P H,Seok H,Ha Y L,et al.Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films[J].Thin Solid Films,2002,419(1/2):183-188.
[14] Wang H,Yao X.Structure and dielectric properties of pyrochlore:fluorite biphase ceramics in the Bi2O3-ZnO-Nb2O5 system[J].Journal of Materials Research,2001,16(1):83-87.
[15] Zhao Y P,Wang G C,Lu T M,et al.Surface-roughness effect on capacitance and leakage current of an insulating film[J].Physical Review B,1999,60:9157-9164.
[16] Vendik O G,Rogachev A N.Electrostriction mechanism of microwave losses in a ferroelectric film and experimental confirmation[J].Technical Physics Letters,1999,25(9):702-704.
[17] Ahn J K,Cuong N D,Yoon S G,et al.Structural and electrical properties of Bi1.5Mg1.0Nb1.5O7 thin films deposited on Pt/TiO2/SiO2/Si substrates by RF-magnetron sputtering[J].Journal of Vacuum Science & Technology B,2008,26(4):1277-1280.
[18] Li W,Chen K,Yao Y Y,et al.Correlation among oxygen vacancies in bismuth titanate ferroelectric ceramics[J].Applied Physics Letters,2004,85:4717-4719.
[19] Sahu B S,Ahn J K,Seong N J,et al.Structural and electrical properties of high-κ Bi2Mg2/3Nb4/3O7 pyrochlore films on silicon for possible gate dielectric applications[J].Journal of Applied Physics,2007,102(5):054103.
[20] 蒋书文,李汝冠,王鲁豫,等.介电可调薄膜材料及压控微波器件研究[J].电子科技大学学报,2009,38(5):609-617.

备注/Memo

备注/Memo:
收稿日期:2013-09-03
基金项目:江苏高校优势学科建设工程; 长江学者和创新团队发展计划(IRT1146)
作者简介:高虹(1984—),女,江苏盐城人,博士生,主要研究方向为陶瓷薄膜的制备与表征; 吕忆农(联系人),教授,E-mail: yinonglu@njtech.edu.cn; 刘云飞(联系人),副教授,E-mail: yfliu@njtech.edu.cn..
更新日期/Last Update: 2014-05-20