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[1]闻俊夫,王玉龙,王一峰.Bi再掺杂对Mg2Si0.985Bi0.015热电材料性能的影响[J].南京工业大学学报(自然科学版),2016,38(04):33-38.[doi:10.3969/j.issn.1671-7627.2016.04.007]
 WEN Junfu,WANG Yulong,WANG Yifeng.Effects of additional Bi-doping on properties of Mg2Si0.985Bi0.015 thermoelectric material[J].Journal of NANJING TECH UNIVERSITY(NATURAL SCIENCE EDITION),2016,38(04):33-38.[doi:10.3969/j.issn.1671-7627.2016.04.007]
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Bi再掺杂对Mg2Si0.985Bi0.015热电材料性能的影响()
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《南京工业大学学报(自然科学版)》[ISSN:1671-7627/CN:32-1670/N]

卷:
38
期数:
2016年04期
页码:
33-38
栏目:
出版日期:
2016-07-10

文章信息/Info

Title:
Effects of additional Bi-doping on properties of Mg2Si0.985Bi0.015 thermoelectric material
文章编号:
1671-7627(2016)04-0033-06
作者:
闻俊夫王玉龙王一峰
南京工业大学 材料科学与工程学院,江苏 南京 210009
Author(s):
WEN JunfuWANG YulongWANG Yifeng
College of Materials Science and Engineering,Nanjing Tech University,Nanjing 210009,China
关键词:
Mg2Si Bi再掺杂 热电性能
Keywords:
Mg2Si additional Bi-doping thermoelectric performance
分类号:
N34
DOI:
10.3969/j.issn.1671-7627.2016.04.007
文献标志码:
A
摘要:
本文考察Bi再掺杂对Mg2Si0.985Bi0.015基体的组成、微观结构以及电子输运与热导率等方面的影响。采用X线衍射仪(XRD)和电子能谱(EDS)等对样品进行表征分析。结果表明:再掺杂的Bi除部分进入Mg2Si0.985Bi0.015基体外,其余在晶界处生成Mg3Bi2。由于Mg2Si中Bi量的提高使得载流子浓度增加,进而增大样品的电导率,而塞贝克系数受载流子浓度变化和杂相的影响甚微。热导率则因Bi量增加和杂相的存在略有降低。在873 K时,2%Bi再掺杂样品的最高热电优值(ZT)为0.78,比未再掺杂样品提升约10%,说明Bi再掺杂对Mg2Si基体材料热电性能有一定提升作用。
Abstract:
The effects of additional Bi-doping on the Mg2Si0.985Bi0.015 matrix composition,microstructure and the transport properties were investigated. Results showed that the analysis of X-ray diffraction(XRD)and energy dispersive spectroscopy(EDS),the additionally added Bi atoms would enter the readily doped matrix partially,while mainly forming Mg3Bi2 locally on the grain boundaries.The electrical conductivity increased with the amount of additionally added Bi,due to the increase of carrier concentration with enhanced Bi amount effectively doped into the Mg2Si phase.Seebeck coefficient was found to be insensitive to the additional doping,which would be caused by the combined effect of the increased carrier concentration and the impurities.Thermal conductivity was decreased slightly as the result of increased Bi incorporation and impurity phonon scattering.The maximum ZT value was 0.78 at 873 K for the additional 2%Bi-doping sample, it was limitedly increased about 10% compared with that of Mg2Si0.985Bi0.015.

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备注/Memo

备注/Memo:
收稿日期:2015-03-14
基金项目:国家自然科学基金面上资助项目(51272103)
作者简介:闻俊夫(1988—),男,辽宁鞍山人,硕士,主要研究方向为硅化镁热电材料; 王一峰(联系人),教授,E-mail:yifeng.wang@njtech.edu.cn.
引用本文:闻俊夫,王玉龙,王一峰.Bi再掺杂对Mg2Si0.985Bi0.015热电材料性能的影响[J].南京工业大学学报(自然科学版),2016,38(4):33-38..
更新日期/Last Update: 2016-07-10